Christian M. Krammel, TUE

Title: Scanning Tunneling Lumiescence on Si Doped GaAs
Session: 15:00


One of the driving forces behind the continuously advancing filed of optoelectronics is an increasing miniaturization. This leads to a strong demand for optical spectroscopy techniques at the nanometer length scale. Conventional optical far-field techniques, whose spatial resolution is wavelength limited, cannot close this gap. Here, scanning tunneling luminescence (STL), where electroluminescence is induced by carriers injected from the tip of a scanning tunneling microscope (STM), is used to study simultaneously structural and optical properties of GaAs:Si a the atomic length scale. In GaAs layers with different Si concentrations distinct spectral features are observed, whose origin is discussed. Based on this the spectral response of single Si atoms is investigated.


to be announced

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