Adrie Mackus, TUE

Title: Atomic layer deposition for advanced nanopatterning
Session: 15:15

Abstract

Atomic layer deposition (ALD) is a method enabling the deposition of thin films with atomic-level control of the thickness and unparalleled uniformity on nanostructured surfaces. ALD has gained much attention in the past decade for applications in nanoelectronics, which typically requires a patterned film instead of full coating. In this contribution, several approaches for the patterning of ALD-grown films will be discussed. Because ALD relies strongly on surface chemistry, it is possible to achieve area-selective ALD by local activation or de-activation of the ALD growth. Recent efforts focus on the use of area-selective ALD in self-aligned fabrication schemes for nanoelectronics with critical dimensions below 10 nm. The deposition of material only there where it is needed, reduces the number of required lithography and etching steps, and thereby eliminates alignment challenges.

Bio

Adrie Mackus (1985) is an assistant professor in Applied Physics at Eindhoven University of Technology, TU/e. He earned his M.Sc. and Ph.D. degrees (both cum laude) in Applied Physics from TU/e in 2009 and 2013, respectively. Adrie worked as a postdoc at the department of Chemical Engineering at Stanford University in 2014-2015, after which he returned to TU/e in 2016. His current research covers the field of thin film deposition by atomic layer deposition (ALD) for applications in nanoelectronics, with the focus on selective deposition and on the study of the underlying reaction mechanisms.

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